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WNSC12650T6J

WeEn Semiconductors
WNSC12650T6J Preview
WeEn Semiconductors
SILICON CARBIDE SCHOTTKY DIODE
$1.95
Available to order
Reference Price (USD)
1+
$1.94700
500+
$1.92753
1000+
$1.90806
1500+
$1.88859
2000+
$1.86912
2500+
$1.84965
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 12 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 60 µA @ 650 V
  • Capacitance @ Vr, F: 328pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 4-VSFN Exposed Pad
  • Supplier Device Package: 5-DFN (8x8)
  • Operating Temperature - Junction: 175°C

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