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WNSC101200Q

WeEn Semiconductors
WNSC101200Q Preview
WeEn Semiconductors
SILICON CARBIDE POWER DIODE
$5.12
Available to order
Reference Price (USD)
1+
$5.11500
500+
$5.06385
1000+
$5.0127
1500+
$4.96155
2000+
$4.9104
2500+
$4.85925
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 110 µA @ 1200 V
  • Capacitance @ Vr, F: 510pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: 175°C (Max)

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