W987D2HBJX7E TR
Winbond Electronics
Winbond Electronics
IC DRAM 128MBIT PARALLEL 90VFBGA
$2.67
Available to order
Reference Price (USD)
2,500+
$2.18391
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Trust Winbond Electronics W987D2HBJX7E TR Memory ICs for all your critical storage needs, offering industry-leading technology. Designed for applications in military, healthcare, and telecommunications, these ICs feature secure data retention, high cycle endurance, and broad compatibility. Winbond Electronics W987D2HBJX7E TR sets the standard in memory innovation. Place your inquiry now and benefit from our expertise and support!
Specifications
- Product Status: Not For New Designs
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPSDR
- Memory Size: 128Mb (4M x 32)
- Memory Interface: Parallel
- Clock Frequency: 133 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 5.4 ns
- Voltage - Supply: 1.7V ~ 1.95V
- Operating Temperature: -25°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 90-TFBGA
- Supplier Device Package: 90-VFBGA (8x13)
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