W66BQ6NBUAHJ
Winbond Electronics
Winbond Electronics
2GB LPDDR4X, X16, 2133MHZ, -40C~
$6.35
Available to order
Reference Price (USD)
1+
$6.34597
500+
$6.2825103
1000+
$6.2190506
1500+
$6.1555909
2000+
$6.0921312
2500+
$6.0286715
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your system's efficiency with Winbond Electronics W66BQ6NBUAHJ Memory ICs, designed for high-demand environments. Ideal for AI, machine learning, and edge computing, these ICs provide ultra-fast processing, error resilience, and compact form factors. Winbond Electronics W66BQ6NBUAHJ is synonymous with excellence in memory technology. Reach out to us now for expert advice and competitive pricing!
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4X
- Memory Size: 2Gb (128M x 16)
- Memory Interface: LVSTL_11
- Clock Frequency: 2.133 GHz
- Write Cycle Time - Word, Page: 18ns
- Access Time: 3.5 ns
- Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 105°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 200-WFBGA
- Supplier Device Package: 200-WFBGA (10x14.5)
Related Products
Micron Technology Inc.
MT28EW01GABA1HJS-0AAT TR
Infineon Technologies
CY15E064Q-SXE
Micron Technology Inc.
MT29F2G08ABAGAH4-AIT:G
Renesas Electronics America Inc
71V67803S133BGG8
Microchip Technology
93LC56-I/P
Microchip Technology
48L256T-I/SN
Cypress Semiconductor Corp
CY7C131-35NI
Microchip Technology
AT28LV010-20JU-630
Winbond Electronics
W631GU8NB-12 TR
Rochester Electronics, LLC