W66BQ6NBUAFJ TR
Winbond Electronics
Winbond Electronics
2GB LPDDR4X, X16, 1600MHZ, -40C~
$5.10
Available to order
Reference Price (USD)
1+
$5.10004
500+
$5.0490396
1000+
$4.9980392
1500+
$4.9470388
2000+
$4.8960384
2500+
$4.845038
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Winbond Electronics W66BQ6NBUAFJ TR Memory ICs deliver cutting-edge technology for modern applications. Perfect for automotive, telecommunications, and IoT devices, these ICs offer high reliability and low latency. Notable features are extended lifecycle, wide temperature range, and compatibility with multiple interfaces. Choose Winbond Electronics W66BQ6NBUAFJ TR for superior memory solutions. Get in touch with us today to discuss your project needs!
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR4X
- Memory Size: 2Gb (128M x 16)
- Memory Interface: LVSTL_11
- Clock Frequency: 1.6 GHz
- Write Cycle Time - Word, Page: 18ns
- Access Time: 3.5 ns
- Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Operating Temperature: -40°C ~ 105°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 200-WFBGA
- Supplier Device Package: 200-WFBGA (10x14.5)
Related Products
Microchip Technology
93AA46BT-I/SN
Microchip Technology
24C16/P
Infineon Technologies
S25FL128SDPNFI001
Macronix
MX25V4035FM2I
Renesas Electronics America Inc
71V65803S100BGI
Macronix
MX25V2006EM1I-13G
Alliance Memory, Inc.
AS4C16M32SC-7TINTR
Cypress Semiconductor Corp
CY7C131-55NC
ISSI, Integrated Silicon Solution Inc
IS62WV5128EBLL-45BLI
Rochester Electronics, LLC