VWM200-01P
IXYS
IXYS
MOSFET 6N-CH 100V 210A V2
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The VWM200-01P from IXYS is a premium option in the Discrete Semiconductor Products category, specializing in Transistors - FETs, MOSFETs - Arrays. With advanced features such as high-frequency operation, low leakage current, and excellent ESD protection, these components are perfect for demanding electronic applications. Whether you re working on telecommunications, computing, or medical devices, VWM200-01P offers the reliability you need. Contact us now to discuss how we can support your project requirements with IXYS s cutting-edge solutions.
Specifications
- Product Status: Obsolete
- FET Type: 6 N-Channel (3-Phase Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 210A
- Rds On (Max) @ Id, Vgs: 5.2mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 4V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 430nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: V2-PAK
- Supplier Device Package: V2-PAK
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