VS-ST183S08PFN1
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
SCR 800V 306A TO209AB
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Reference Price (USD)
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$111.95417
Exquisite packaging
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Optimize power management with Vishay General Semiconductor - Diodes Division's VS-ST183S08PFN1 Thyristors - SCRs, offering unmatched performance in demanding environments. Key features include high dv/dt capability, low holding current, and robust packaging, ideal for motor control, energy storage, and renewable energy systems. Vishay General Semiconductor - Diodes Division stands behind the reliability of VS-ST183S08PFN1. Need assistance selecting the right SCR? Contact us now for a quick response and competitive pricing.
Specifications
- Product Status: Active
- Voltage - Off State: 800 V
- Voltage - Gate Trigger (Vgt) (Max): 3 V
- Current - Gate Trigger (Igt) (Max): 200 mA
- Voltage - On State (Vtm) (Max): 1.8 V
- Current - On State (It (AV)) (Max): 195 A
- Current - On State (It (RMS)) (Max): 306 A
- Current - Hold (Ih) (Max): 600 mA
- Current - Off State (Max): 40 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 4120A, 4310A
- SCR Type: Standard Recovery
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis, Stud Mount
- Package / Case: TO-209AB, TO-93-4, Stud
- Supplier Device Package: TO-209AB (TO-93)
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