VS-GP300TD60S
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 600V 580A INT-A-PAK
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Discover high-performance VS-GP300TD60S IGBT Modules from Vishay General Semiconductor - Diodes Division, designed for robust power management in industrial applications. These modules feature advanced thermal management, high voltage tolerance, and efficient switching capabilities, making them ideal for motor drives, renewable energy systems, and power supplies. Upgrade your systems with reliable Vishay General Semiconductor - Diodes Division technology. Contact us today for a quote!
Specifications
- Product Status: Last Time Buy
- IGBT Type: PT, Trench
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 580 A
- Power - Max: 1136 W
- Vce(on) (Max) @ Vge, Ic: 1.45V @ 15V, 300A
- Current - Collector Cutoff (Max): 150 µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Dual INT-A-PAK (3 + 8)
- Supplier Device Package: Dual INT-A-PAK
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