VS-GB75TP120N
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 1200V 150A INT-A-PAK
$0.00
Available to order
Reference Price (USD)
24+
$219.72417
Exquisite packaging
Discount
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Maximize efficiency in your power electronics with the VS-GB75TP120N IGBT Module by Vishay General Semiconductor - Diodes Division. Perfect for elevators and conveyor systems, it features low switching losses and high noise immunity. Vishay General Semiconductor - Diodes Division leads in innovation contact us for expert support and competitive pricing.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 150 A
- Power - Max: 543 W
- Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 75A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 5.52 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: INT-A-PAK (3 + 4)
- Supplier Device Package: INT-A-PAK
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