VS-GB75NA60UF
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 600V 109A 447W SOT227
$0.00
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Reference Price (USD)
160+
$27.16344
Exquisite packaging
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The VS-GB75NA60UF from Vishay General Semiconductor - Diodes Division sets the standard in IGBT Modules with its compact design and high power density. Ideal for servo drives and plasma cutting, it combines fast switching with low conduction losses. Partner with Vishay General Semiconductor - Diodes Division for top-tier semiconductor solutions. Get in touch for details!
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 109 A
- Power - Max: 447 W
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
- Current - Collector Cutoff (Max): 50 µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
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