Shopping cart

Subtotal: $0.00

VS-GB70NA60UF

Vishay General Semiconductor - Diodes Division
VS-GB70NA60UF Preview
Vishay General Semiconductor - Diodes Division
IGBT MOD 600V 111A 447W SOT227
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Obsolete
  • IGBT Type: NPT
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 111 A
  • Power - Max: 447 W
  • Vce(on) (Max) @ Vge, Ic: 2.44V @ 15V, 70A
  • Current - Collector Cutoff (Max): 100 µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227

Related Products

Infineon Technologies

FS150R06KL4B4BDLA1

Littelfuse Inc.

MG06600WB-BN4MM

Vishay General Semiconductor - Diodes Division

VS-GB90DA120U

Powerex Inc.

CM200DY-24A

Infineon Technologies

2PS18012E44G38553NOSA1

Infineon Technologies

6MS20017E43W37032NOSA1

Microchip Technology

APT100GT60JR

Infineon Technologies

F475R12KS4BOSA1

Infineon Technologies

2LS20017E42W40403NOSA1

Littelfuse Inc.

MG06400D-BN4MM

Top