VS-GB50TP120N
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 1200V 100A INT-A-PAK
$0.00
Available to order
Reference Price (USD)
24+
$69.64000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The VS-GB50TP120N from Vishay General Semiconductor - Diodes Division sets the standard in IGBT Modules with its compact design and high power density. Ideal for servo drives and plasma cutting, it combines fast switching with low conduction losses. Partner with Vishay General Semiconductor - Diodes Division for top-tier semiconductor solutions. Get in touch for details!
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 100 A
- Power - Max: 446 W
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 4.29 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: INT-A-PAK (3 + 4)
- Supplier Device Package: INT-A-PAK
Related Products
Infineon Technologies
BSM300GB60DLCHOSA1
Infineon Technologies
BSM100GP60BOSA1
Microsemi Corporation
APTGT35A120D1G
Microsemi Corporation
APTGF25DDA120T3G
Microsemi Corporation
APTGF100DU120TG
Vishay General Semiconductor - Diodes Division
VS-70MT060WHTAPBF
IXYS
IXGN200N60A2
Infineon Technologies
IRG5U150HF12B
Powerex Inc.
CM600DU-12NFH
Powerex Inc.