VS-GB200LH120N
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 1200V 370A INT-A-PAK
$0.00
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Reference Price (USD)
12+
$416.98083
Exquisite packaging
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Discover high-performance VS-GB200LH120N IGBT Modules from Vishay General Semiconductor - Diodes Division, designed for robust power management in industrial applications. These modules feature advanced thermal management, high voltage tolerance, and efficient switching capabilities, making them ideal for motor drives, renewable energy systems, and power supplies. Upgrade your systems with reliable Vishay General Semiconductor - Diodes Division technology. Contact us today for a quote!
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 370 A
- Power - Max: 1562 W
- Vce(on) (Max) @ Vge, Ic: 2.07V @ 15V, 200A (Typ)
- Current - Collector Cutoff (Max): 100 nA
- Input Capacitance (Cies) @ Vce: 18 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Double INT-A-PAK (3 + 4)
- Supplier Device Package: Double INT-A-PAK
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