VS-GB150TH120N
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 1200V 300A INT-A-PAK
$0.00
Available to order
Reference Price (USD)
12+
$422.51833
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Achieve precision power control with Vishay General Semiconductor - Diodes Division's VS-GB150TH120N IGBT Module. Its rugged construction and high isolation voltage make it a top choice for marine propulsion and grid infrastructure. Features include solder-free assembly and RoHS compliance. Elevate your systems request a consultation today.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 300 A
- Power - Max: 1008 W
- Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 150A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Double INT-A-PAK (3 + 4)
- Supplier Device Package: Double INT-A-PAK
Related Products
Vishay General Semiconductor - Diodes Division
VS-GT400TH120U
Powerex Inc.
CM600HU-12H
Microsemi Corporation
APTGT75SK60T1G
IXYS
IXEN60N120
Microsemi Corporation
APTGT150A170D1G
Littelfuse Inc.
MG1750S-BN4MM
Microsemi Corporation
APTGF90DH60TG
IXYS
MUBW15-06A7
Powerex Inc.
MG150J7KS61
Powerex Inc.