VS-GB150LH120N
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 1200V 300A INT-A-PAK
$0.00
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Reference Price (USD)
12+
$116.21417
Exquisite packaging
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Achieve precision power control with Vishay General Semiconductor - Diodes Division's VS-GB150LH120N IGBT Module. Its rugged construction and high isolation voltage make it a top choice for marine propulsion and grid infrastructure. Features include solder-free assembly and RoHS compliance. Elevate your systems request a consultation today.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 300 A
- Power - Max: 1389 W
- Vce(on) (Max) @ Vge, Ic: 1.87V @ 15V, 150A (Typ)
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 10.6 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Double INT-A-PAK (3 + 4)
- Supplier Device Package: Double INT-A-PAK
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