VS-GB100TS60NPBF
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 600V 108A INT-A-PAK
$0.00
Available to order
Reference Price (USD)
15+
$88.32467
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your project's performance with the VS-GB100TS60NPBF IGBT Module by Vishay General Semiconductor - Diodes Division. Designed for harsh environments, it provides unmatched efficiency in railway systems, wind turbines, and more. Features like overcurrent protection ensure safety. Let Vishay General Semiconductor - Diodes Division power your innovations send your inquiry now!
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 108 A
- Power - Max: 390 W
- Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 100A
- Current - Collector Cutoff (Max): 100 µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: INT-A-Pak
- Supplier Device Package: INT-A-PAK