VS-GB100NH120N
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 1200V 200A INT-A-PAK
$0.00
Available to order
Reference Price (USD)
12+
$278.18000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The VS-GB100NH120N IGBT Module from Vishay General Semiconductor - Diodes Division delivers superior performance for demanding power control tasks. With features such as short-circuit protection and high-frequency operation, it's suited for solar inverters, industrial automation, and more. Trust Vishay General Semiconductor - Diodes Division for cutting-edge Discrete Semiconductor Products. Request a sample now!
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 200 A
- Power - Max: 833 W
- Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 100A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 8.58 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Double INT-A-PAK (3 + 4)
- Supplier Device Package: Double INT-A-PAK
Related Products
Infineon Technologies
IRG7T75HF12A
Infineon Technologies
4PS03012S43G30699NOSA1
Microsemi Corporation
APTGF50A120TG
Infineon Technologies
FF800R12KF4
Infineon Technologies
IRG7T50FF12E
Powerex Inc.
CM50TU-24H
Powerex Inc.
CM300DU-12NFH
Microsemi Corporation
APTGV25H120BG
Powerex Inc.
CM100BU-12H
Powerex Inc.