VS-GB100LP120N
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MOD 1200V 200A INT-A-PAK
$0.00
Available to order
Reference Price (USD)
24+
$74.34250
Exquisite packaging
Discount
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Enhance your power electronics with VS-GB100LP120N IGBT Modules by Vishay General Semiconductor - Diodes Division. Known for their durability and precision, these modules are perfect for applications like electric vehicles, welding equipment, and UPS systems. Features include low saturation voltage and high current capacity. Get the best in semiconductor solutions reach out for pricing and availability.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 200 A
- Power - Max: 658 W
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 100A (Typ)
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 7.43 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: INT-A-Pak
- Supplier Device Package: INT-A-PAK
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