VS-FC80NA20
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
MOSFET N-CH 200V 108A SOT227
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Reference Price (USD)
160+
$27.52444
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose VS-FC80NA20 by Vishay General Semiconductor - Diodes Division. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with VS-FC80NA20 inquire now for more details!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 14mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 10720 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 405W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227
- Package / Case: SOT-227-4, miniBLOC
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