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VS-ETH3007T-N3

Vishay General Semiconductor - Diodes Division
VS-ETH3007T-N3 Preview
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 650V 30A TO220AC
$0.00
Available to order
Reference Price (USD)
1+
$1.52000
50+
$1.30300
100+
$1.08790
500+
$0.91590
1,000+
$0.74390
Exquisite packaging
Discount
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Specifications

  • Product Status: Obsolete
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 37 ns
  • Current - Reverse Leakage @ Vr: 30 µA @ 650 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C

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