Shopping cart

Subtotal: $0.00

VS-ETH0806-M3

Vishay General Semiconductor - Diodes Division
VS-ETH0806-M3 Preview
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 8A TO220-2
$1.16
Available to order
Reference Price (USD)
1+
$1.12000
10+
$1.01400
100+
$0.80680
500+
$0.67926
1,000+
$0.55170
2,500+
$0.51981
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 2.65 V @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 21 ns
  • Current - Reverse Leakage @ Vr: 12 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 175°C

Related Products

onsemi

S115FA

Nexperia USA Inc.

PMEG3020ER,115

Comchip Technology

US2A-HF

STMicroelectronics

STTH3010W

Diodes Incorporated

SBRT2U45LP-7

Microchip Technology

HSM580JE3/TR13

Infineon Technologies

IDK02G120C5XTMA1

Vishay General Semiconductor - Diodes Division

VS-12FLR40S02

GeneSiC Semiconductor

MBRH24020

Top