VS-8EWS08S-M3
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 8A TO252AA
$3.12
Available to order
Reference Price (USD)
1+
$2.83000
75+
$2.40227
150+
$2.04673
525+
$1.68158
1,050+
$1.39330
2,550+
$1.34526
Exquisite packaging
Discount
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Achieve superior power conversion with VS-8EWS08S-M3 Single Rectifier Diodes from Vishay General Semiconductor - Diodes Division. These diodes are designed for high-performance applications, offering low forward voltage and high reverse voltage capabilities. Perfect for industrial automation, consumer electronics, and energy-efficient systems, they ensure reliable operation under varying loads. Key benefits include extended lifespan, minimal power dissipation, and compact design. Elevate your projects with Vishay General Semiconductor - Diodes Division's cutting-edge technology. Contact us for more information!
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50 µA @ 800 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: D-PAK (TO-252AA)
- Operating Temperature - Junction: -55°C ~ 150°C
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