VS-40MT120UHTAPBF
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MODULE 1200V 80A 463W MTP
$0.00
Available to order
Reference Price (USD)
105+
$89.02876
Exquisite packaging
Discount
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Boost your project's performance with the VS-40MT120UHTAPBF IGBT Module by Vishay General Semiconductor - Diodes Division. Designed for harsh environments, it provides unmatched efficiency in railway systems, wind turbines, and more. Features like overcurrent protection ensure safety. Let Vishay General Semiconductor - Diodes Division power your innovations send your inquiry now!
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 80 A
- Power - Max: 463 W
- Vce(on) (Max) @ Vge, Ic: 4.91V @ 15V, 80A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 8.28 nF @ 30 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 12-MTP Module
- Supplier Device Package: MTP
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