Shopping cart

Subtotal: $0.00

VS-20ETF10S-M3

Vishay General Semiconductor - Diodes Division
VS-20ETF10S-M3 Preview
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 20A TO263AB
$1.56
Available to order
Reference Price (USD)
1,000+
$1.59163
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 400 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB (D²PAK)
  • Operating Temperature - Junction: -40°C ~ 150°C

Related Products

Vishay General Semiconductor - Diodes Division

VS-T70HF60

Micro Commercial Co

GS2G-LTP

Panjit International Inc.

RS1M_R1_00001

Global Power Technology-GPT

G3S12015A

Vishay General Semiconductor - Diodes Division

VS-4ESH02-M3/86A

Infineon Technologies

BAT64-04B5003

Vishay General Semiconductor - Diodes Division

SL42-M3/57T

Microchip Technology

1N5550US/TR

Diotec Semiconductor

SK1030D2

Diodes Incorporated

B2100Q-13-F

Top