VS-100MT060WSP
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
IGBT MODULE 600V 107A 403W MTP
$0.00
Available to order
Reference Price (USD)
105+
$49.40619
Exquisite packaging
Discount
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Vishay General Semiconductor - Diodes Division's VS-100MT060WSP IGBT Module offers exceptional reliability for critical applications like aerospace and defense. With features such as avalanche ruggedness and low VCE(sat), it ensures optimal performance. Trust Vishay General Semiconductor - Diodes Division for advanced Discrete Semiconductor Products. Ask about customization options!
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 107 A
- Power - Max: 403 W
- Vce(on) (Max) @ Vge, Ic: 2.49V @ 15V, 60A
- Current - Collector Cutoff (Max): 100 µA
- Input Capacitance (Cies) @ Vce: 9.5 nF @ 30 V
- Input: Single Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 12-MTP Module
- Supplier Device Package: MTP
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