VN10LP
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 60V 270MA TO92-3
$0.91
Available to order
Reference Price (USD)
1+
$0.97000
10+
$0.85300
100+
$0.66790
500+
$0.50568
1,000+
$0.41297
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of VN10LP, a premium Transistors - FETs, MOSFETs - Single from Diodes Incorporated. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, VN10LP is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 625mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-92
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Related Products
Diodes Incorporated
DMN53D0LQ-7
Infineon Technologies
IPB009N03LGATMA1
Infineon Technologies
IRF7425TRPBF
Toshiba Semiconductor and Storage
TK5A53D(STA4,Q,M)
Comchip Technology
CMS04N06Y-HF
Toshiba Semiconductor and Storage
TK34A10N1,S4X
Nexperia USA Inc.
PSMN020-100YS,115
onsemi
FDP33N25
Vishay Siliconix
SQJ431AEP-T1_BE3
IXYS