US1J-M3/5AT
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO214AC
$0.08
Available to order
Reference Price (USD)
1+
$0.08389
500+
$0.0830511
1000+
$0.0822122
1500+
$0.0813733
2000+
$0.0805344
2500+
$0.0796955
Exquisite packaging
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Boost your electronic designs with US1J-M3/5AT Single Rectifier Diodes by Vishay General Semiconductor - Diodes Division, offering unparalleled efficiency and durability. Ideal for power supplies, inverters, and DC-DC converters, these diodes feature ultra-low leakage and high junction temperature tolerance. Their robust design ensures stable performance in extreme conditions. Whether for prototyping or mass production, Vishay General Semiconductor - Diodes Division has you covered. Request a quote or technical support today!
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
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