UPA2825T1S-E2-AT
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 30V 8HVSON
$0.00
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Reference Price (USD)
5,000+
$0.47600
Exquisite packaging
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Boost your electronic applications with UPA2825T1S-E2-AT, a reliable Transistors - FETs, MOSFETs - Single by Renesas Electronics America Inc. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, UPA2825T1S-E2-AT meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.6mOhm @ 24A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta), 16.5W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HWSON (3.3x3.3)
- Package / Case: 8-PowerWDFN
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