UPA2800T1L-E1-AY
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 30V 17A 8DFN
$0.75
Available to order
Reference Price (USD)
1+
$0.75000
500+
$0.7425
1000+
$0.735
1500+
$0.7275
2000+
$0.72
2500+
$0.7125
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of UPA2800T1L-E1-AY, a premium Transistors - FETs, MOSFETs - Single from Renesas Electronics America Inc. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, UPA2800T1L-E1-AY is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 7.3mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN3333 (3.3x3.3)
- Package / Case: 8-VDFN Exposed Pad
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