UJ4SC075018B7S
UnitedSiC
UnitedSiC
750V/18MOHM, N-OFF SIC STACK CAS
$20.74
Available to order
Reference Price (USD)
1+
$20.74000
500+
$20.5326
1000+
$20.3252
1500+
$20.1178
2000+
$19.9104
2500+
$19.703
Exquisite packaging
Discount
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UJ4SC075018B7S by UnitedSiC is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, UJ4SC075018B7S ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 750 V
- Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 12V
- Vgs(th) (Max) @ Id: 6V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1414 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 259W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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