UJ3C120070K3S
UnitedSiC
UnitedSiC
SICFET N-CH 1200V 34.5A TO247-3
$15.82
Available to order
Reference Price (USD)
1+
$15.82000
500+
$15.6618
1000+
$15.5036
1500+
$15.3454
2000+
$15.1872
2500+
$15.029
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose UJ3C120070K3S by UnitedSiC. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with UJ3C120070K3S inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Cascode SiCJFET)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 34.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 12V
- Vgs(th) (Max) @ Id: 6V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 254.2W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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