UGB8DT-E3/81
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A TO263AB
$1.37
Available to order
Reference Price (USD)
800+
$0.80259
1,600+
$0.65186
2,400+
$0.61418
Exquisite packaging
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Experience next-level performance with Vishay General Semiconductor - Diodes Division's UGB8DT-E3/81 Single Rectifier Diodes, designed for high-power applications. These diodes provide excellent rectification efficiency, making them suitable for solar panels, electric vehicles, and UPS systems. Key features include high current density, fast recovery, and superior thermal management. Vishay General Semiconductor - Diodes Division stands by its products with rigorous testing and quality assurance. Need assistance? Contact our sales team now!
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 30 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 200 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
- Operating Temperature - Junction: -55°C ~ 150°C
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