Shopping cart

Subtotal: $0.00

UG06DH

Taiwan Semiconductor Corporation
UG06DH Preview
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 600MA TS-1
$0.11
Available to order
Reference Price (USD)
1+
$0.10846
500+
$0.1073754
1000+
$0.1062908
1500+
$0.1052062
2000+
$0.1041216
2500+
$0.103037
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 600mA
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 600 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 15 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: 9pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: T-18, Axial
  • Supplier Device Package: TS-1
  • Operating Temperature - Junction: -55°C ~ 150°C

Related Products

Vishay General Semiconductor - Diodes Division

VS-SD400C24C

Vishay General Semiconductor - Diodes Division

GSD2004WS-E3-08

Vishay General Semiconductor - Diodes Division

VS-70HFLR20S02

Vishay General Semiconductor - Diodes Division

SS2FH6-M3/I

Micro Commercial Co

FR501GP-TP

Solid State Inc.

1N1343RB

Vishay General Semiconductor - Diodes Division

VS-20ETF04STRL-M3

Vishay General Semiconductor - Diodes Division

SD101BW-G3-18

Taiwan Semiconductor Corporation

ES1HL R3G

Top