TW030N120C,S1F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
G3 1200V SIC-MOSFET TO-247 30MO
$36.09
Available to order
Reference Price (USD)
1+
$36.09000
500+
$35.7291
1000+
$35.3682
1500+
$35.0073
2000+
$34.6464
2500+
$34.2855
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose TW030N120C,S1F by Toshiba Semiconductor and Storage. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with TW030N120C,S1F inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 40mOhm @ 30A, 18V
- Vgs(th) (Max) @ Id: 5V @ 13mA
- Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 18 V
- Vgs (Max): +25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 2925 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 249W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
Related Products
Panjit International Inc.
PJA3416AE_R1_00001
Infineon Technologies
IPI47N10S33AKSA1
IXYS
IXTP220N04T2
Microchip Technology
APT5017BVFRG
Nexperia USA Inc.
PMPB14R0EPX
Vishay Siliconix
IRFR014PBF
NXP USA Inc.
PMV28UN,215
Diodes Incorporated
DMT4008LSS-13
STMicroelectronics
STP11NK40ZFP
Diodes Incorporated