TSM9N90ECI C0G
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
MOSFET N-CH 900V 9A ITO220AB
$0.00
Available to order
Reference Price (USD)
1+
$2.96000
10+
$2.64300
100+
$2.16750
500+
$1.75512
1,000+
$1.48022
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with TSM9N90ECI C0G by Taiwan Semiconductor Corporation, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, TSM9N90ECI C0G ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.4Ohm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 89W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ITO-220AB
- Package / Case: TO-220-3 Full Pack, Isolated Tab
Related Products
Infineon Technologies
IRL3715ZCS
STMicroelectronics
STP40NS15
Infineon Technologies
BSR92PL6327HTSA1
Alpha & Omega Semiconductor Inc.
AON7520
Infineon Technologies
BSC130P03LSGAUMA1
Vishay Siliconix
IRLZ34STRL
Infineon Technologies
SPP100N06S2L-05
Infineon Technologies
IRL7833LPBF
Fairchild Semiconductor
FDP045N10AF102
onsemi