TSM600P03CS RLG
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
MOSFET P-CHANNEL 30V 4.7A 8SOP
$0.94
Available to order
Reference Price (USD)
2,500+
$0.14229
5,000+
$0.13311
12,500+
$0.12852
Exquisite packaging
Discount
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Discover TSM600P03CS RLG, a versatile Transistors - FETs, MOSFETs - Single solution from Taiwan Semiconductor Corporation, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 60mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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