TSM4N80CZ C0G
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 800V 4A TO220
$0.00
Available to order
Reference Price (USD)
1+
$1.71000
10+
$1.54300
100+
$1.23980
500+
$0.96426
1,000+
$0.79895
3,000+
$0.77140
Exquisite packaging
Discount
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Optimize your electronic systems with TSM4N80CZ C0G, a high-quality Transistors - FETs, MOSFETs - Single from Taiwan Semiconductor Corporation. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, TSM4N80CZ C0G provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3Ohm @ 1.2A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 38.7W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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