TSM3N80CH C5G
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 800V 3A TO251
$0.00
Available to order
Reference Price (USD)
1+
$1.39000
10+
$1.23300
100+
$0.97490
500+
$0.75602
1,875+
$0.59685
3,750+
$0.55706
Exquisite packaging
Discount
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Boost your electronic applications with TSM3N80CH C5G, a reliable Transistors - FETs, MOSFETs - Single by Taiwan Semiconductor Corporation. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, TSM3N80CH C5G meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.2Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 696 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 94W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251 (IPAK)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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