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TSM160N10CZ C0G

Taiwan Semiconductor Corporation
TSM160N10CZ C0G Preview
Taiwan Semiconductor Corporation
MOSFET N-CH 100V 160A TO220
$2.69
Available to order
Reference Price (USD)
1+
$2.82000
10+
$2.55000
100+
$2.04910
500+
$1.59372
1,000+
$1.32052
3,000+
$1.27498
Exquisite packaging
Discount
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Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 9840 pF @ 30 V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3

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