TSM150P03PQ33 RGG
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
MOSFET P-CH 30V 36A 8PDFN
$0.78
Available to order
Reference Price (USD)
5,000+
$0.19010
10,000+
$0.18354
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Taiwan Semiconductor Corporation presents TSM150P03PQ33 RGG, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, TSM150P03PQ33 RGG delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29.3 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1829 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 27.8W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PDFN (3.1x3.1)
- Package / Case: 8-PowerWDFN
Related Products
Infineon Technologies
IPT60R055CFD7XTMA1
Rectron USA
RM4N650TI
Rohm Semiconductor
R6015ENX
IXYS
IXTK120N25P
Vishay Siliconix
SIR401DP-T1-GE3
Infineon Technologies
IPD65R600C6BTMA1
Microchip Technology
APT26M100JCU3
onsemi
NVD5484NLT4G
Taiwan Semiconductor Corporation
TSM2306CX RFG
Infineon Technologies