TSM130NB06LCR RLG
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
MOSFET N-CH 60V 10A/51A 8PDFN
$0.98
Available to order
Reference Price (USD)
2,500+
$0.34930
5,000+
$0.33726
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with TSM130NB06LCR RLG, a reliable Transistors - FETs, MOSFETs - Single by Taiwan Semiconductor Corporation. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, TSM130NB06LCR RLG meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 51A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2175 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 83W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PDFN (5x6)
- Package / Case: 8-PowerTDFN
Related Products
Vishay Siliconix
SI8499DB-T2-E1
Vishay Siliconix
SI7139DP-T1-GE3
Nexperia USA Inc.
PMPB55ENEAX
Diodes Incorporated
DMT6017LSS-13
Vishay Siliconix
IRLZ24LPBF
Micro Commercial Co
SI2305B-TP
Vishay Siliconix
SI2304BDS-T1-E3
Infineon Technologies
IPB65R190C6ATMA1
Nexperia USA Inc.
BSN20BKR
Vishay Siliconix