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TRS4E65F,S1Q

Toshiba Semiconductor and Storage
TRS4E65F,S1Q Preview
Toshiba Semiconductor and Storage
PB-F DIODE TO-220-2L V=650 IF=4A
$2.53
Available to order
Reference Price (USD)
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$2.53000
500+
$2.5047
1000+
$2.4794
1500+
$2.4541
2000+
$2.4288
2500+
$2.4035
Exquisite packaging
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Specifications

  • Product Status: Active
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 4A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 4 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 20 µA @ 650 V
  • Capacitance @ Vr, F: 16pF @ 650V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220-2L
  • Operating Temperature - Junction: 175°C (Max)

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