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TRS24N65FB,S1Q

Toshiba Semiconductor and Storage
TRS24N65FB,S1Q Preview
Toshiba Semiconductor and Storage
SIC SBD TO-247 V=650 IF=12A
$8.17
Available to order
Reference Price (USD)
1+
$8.17000
500+
$8.0883
1000+
$8.0066
1500+
$7.9249
2000+
$7.8432
2500+
$7.7615
Exquisite packaging
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Specifications

  • Product Status: Active
  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io) (per Diode): 12A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 12 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 60 µA @ 650 V
  • Operating Temperature - Junction: 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247

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