TRS10E65F,S1Q
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
DODE SCHOTTKY 650V TO220
$4.90
Available to order
Reference Price (USD)
1+
$4.90000
500+
$4.851
1000+
$4.802
1500+
$4.753
2000+
$4.704
2500+
$4.655
Exquisite packaging
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Upgrade your electronic designs with Toshiba Semiconductor and Storage's TRS10E65F,S1Q Single Rectifier Diodes, engineered for precision and durability. Perfect for rectification circuits, these diodes offer fast switching, high efficiency, and minimal power loss. Applications span across automotive systems, renewable energy solutions, and telecommunications. Key features include high temperature tolerance, low leakage current, and superior surge protection. Trust Toshiba Semiconductor and Storage for components that meet the highest industry standards. Ready to order? Submit your inquiry now!
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 650 V
- Capacitance @ Vr, F: 36pF @ 650V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2L
- Operating Temperature - Junction: 175°C (Max)
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