TRS10A65F,S1Q
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
PB-F DIODE TO-220-2L V=650 IF=10
$4.90
Available to order
Reference Price (USD)
1+
$4.90000
500+
$4.851
1000+
$4.802
1500+
$4.753
2000+
$4.704
2500+
$4.655
Exquisite packaging
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Revolutionize your power electronics with Toshiba Semiconductor and Storage's TRS10A65F,S1Q Single Rectifier Diodes, offering exceptional performance and reliability. These diodes are ideal for high-frequency and high-voltage applications, including telecommunications and medical devices. With advanced features like low forward drop and high temperature operation, they set the benchmark for quality. Toshiba Semiconductor and Storage provides solutions you can trust. Get started by sending us your requirements!
Specifications
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 650 V
- Capacitance @ Vr, F: 36pF @ 650V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220F-2L
- Operating Temperature - Junction: 175°C (Max)
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