TPW4R50ANH,L1Q
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 100V 92A 8DSOP
$2.66
Available to order
Reference Price (USD)
5,000+
$1.14800
Exquisite packaging
Discount
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Experience the power of TPW4R50ANH,L1Q, a premium Transistors - FETs, MOSFETs - Single from Toshiba Semiconductor and Storage. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, TPW4R50ANH,L1Q is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 4.5mOhm @ 46A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 800mW (Ta), 142W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DSOP Advance
- Package / Case: 8-PowerWDFN
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