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TPS1101D

Texas Instruments
TPS1101D Preview
Texas Instruments
MOSFET P-CH 15V 2.3A 8SOIC
$2.81
Available to order
Reference Price (USD)
1+
$2.56000
10+
$2.31000
75+
$2.06253
150+
$1.85627
525+
$1.44375
1,050+
$1.19625
2,550+
$1.15500
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 15 V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.25 nC @ 10 V
  • Vgs (Max): +2V, -15V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • FET Feature: -
  • Power Dissipation (Max): 791mW (Ta)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOIC
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)

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