TPH3206LDB
Transphorm
Transphorm
GANFET N-CH 650V 16A PQFN
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose TPH3206LDB by Transphorm. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with TPH3206LDB inquire now for more details!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 8V
- Vgs(th) (Max) @ Id: 2.6V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
- Vgs (Max): ±18V
- Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 480 V
- FET Feature: -
- Power Dissipation (Max): 81W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PQFN (8x8)
- Package / Case: 4-PowerDFN
Related Products
Vishay Siliconix
SI5433BDC-T1-GE3
Infineon Technologies
IRF8707GPBF
Infineon Technologies
IRF7834PBF
onsemi
NVMFS5C682NLWFT1G
NXP USA Inc.
PMN15UN,115
onsemi
NTMFS4120NT3G
STMicroelectronics
STF15NM60N
Vishay Siliconix
SI4850EY-T1
onsemi
NVMFS5833NWFT1G
Infineon Technologies