TPC8126,LQ(CM
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET P-CH 30V 11A 8SOP
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose TPC8126,LQ(CM by Toshiba Semiconductor and Storage. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with TPC8126,LQ(CM inquire now for more details!
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 10mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id: 2V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
- Vgs (Max): +20V, -25V
- Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP (5.5x6.0)
- Package / Case: 8-SOIC (0.173", 4.40mm Width)
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