Shopping cart

Subtotal: $0.00

TPC6107(TE85L,F,M)

Toshiba Semiconductor and Storage
TPC6107(TE85L,F,M) Preview
Toshiba Semiconductor and Storage
MOSFET P-CH 20V 4.5A VS-6
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Obsolete
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2V, 4.5V
  • Rds On (Max) @ Id, Vgs: 55mOhm @ 2.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 5 V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: VS-6 (2.9x2.8)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6

Related Products

Infineon Technologies

IRFU3806PBF

Renesas Electronics America Inc

RJK4514DPK-00#T0

Infineon Technologies

IRF7807APBF

Panasonic Electronic Components

MTM232230L

Vishay Siliconix

IRF820ASTRR

Vishay Siliconix

SUD50N03-06P-E3

Infineon Technologies

IRF7353D1

Fairchild Semiconductor

HUFA75545P3

Top